Claas Abert
University of Vienna, Austria

Hossein Sepehri Amin
National Institute for Materials Science, Japan

Vijay Kalappattil
Northeastern University, USA

Tibor-Adrian Ovari
National Institute of R&D for Technical Physics, Romania

Luis M. Moreno-Ramírez
University of Seville, Spain

Tianxiang Nan
Tsinghua University, China

Paula Ribeiro
Universidade do Estado do Rio de Janeiro, Brazil

Paola Maria Tiberto
Istituto Nazionale di Ricerca Metrologica, Italy

Qi Wang
Huazhong University of Science and Technology, China

Amr Adly
Cairo University, Egypt

Yacine Amara
Université Le Havre Normandie, France

Radhika Barua
Virginia Commonwealth University, USA

Jonathan Bird 
Portland State University, USA

David Dorrell 
University of KwaZulu-Natal, South Africa

Ron Jansen
National Institute of Advanced Industrial Science and Technology, Japan

Ganping Ju
Seagate Technology, USA

Dennis C.W. Leung 
The Hong Kong Polytechnic University, Hong Kong

Chunhua Liu
City University of Hong Kong, Hong Kong

Nicoleta Lupu
National Institute of R&D for Technical Physics, Romania

Iulian Nistor
mqSemi AG, Switzerland

Johannes Paulides
Advanced Electromagnetics Group, The Netherlands

Philip Pong
New Jersey Institute of Technology, USA

Rachid Sbiaa
Sultan Qaboos University, Oman

Dan Wei
Tsinghua University, China